# US 2020/0399536 A1 · Quantum dots, a composition or composite including the same, and an electronic device including the same

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- Number: US 2020/0399536 A1
- Document ID: US20200399536A1
- Status: Published application
- Kind: A1
- Application number: 16/904,664
- Filed: 2020-06-18
- Published: 2020-12-24
- Earliest claimed: 2019-06-18
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Tae Gon KIM; Shin Ae JUN; Taek hoon KIM; Hyeyeon YANG; Nayoun WON; Jongmin Lee; Mi Hye LIM
- Web page: https://patentgrep.com/patent/US20200399536A1

## CPC

- C09K 11/70: containing phosphorus
- C08F 220/382: {and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate}
- C09K 11/02: Use of particular materials as binders, particle coatings or suspension media therefor
- C09K 11/025: {non-luminescent particle coatings or suspension media}
- C09K 11/565: {with zinc cadmium}
- C09K 11/703: {with zinc or cadmium}
- C09K 11/88: containing selenium, tellurium or unspecified chalcogen elements
- C09K 11/883: {with zinc or cadmium}
- G02B 6/005: {provided by one optical element, or plurality thereof, placed on the light output side of the light guide}
- G03F 7/0007: {Filters, e.g. additive colour filters; Components for display devices}
- G03F 7/0047: {characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing}
- G03F 7/0275: {with dithiol or polysulfide compounds}
- G03F 7/033: the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
- H05B 33/14: characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source}
- H10H 20/01: Manufacture or treatment
- H10H 20/8512: {Wavelength conversion materials}
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- G02F 1/133617: {Illumination with ultraviolet light; Luminescent elements or materials associated to the cell}
- G02F 2202/36: Micro- or nanomaterials
- H10H 20/034: {of coatings}
- H10H 20/0361: {of wavelength conversion means}
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0,7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.

## Claims

### Claim 1

A quantum dot comprising
a semiconductor nanocrystal core comprising indium and phosphorous,
a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nanometers to an absorption value of a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
(Absfirst−Absvalley)/Absfirst=VD
wherein, Absfirst is the absorption value of the first absorption peak wavelength, and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and
wherein the quantum dot does not comprise cadmium.

### Claim 2 (depends on 1)

The quantum dot of claim 1, wherein the semiconductor nanocrystal core further comprises zinc.

### Claim 3 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium (S/Se) is less than or equal to about 2.5:1.

### Claim 4 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium (S/Se) is less than or equal to about 0.8:1.

### Claim 5 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of zinc with respect to indium is greater than or equal to about 10:1 and less than or equal to about 50:1.

### Claim 6 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of a sum of selenium and sulfur with respect to indium (S+Se)/In is greater than or equal to about 10:1 and less than or equal to about 40:1.

### Claim 7 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of a sum of selenium and sulfur with respect to indium (S+Se)/In is greater than or equal to about 20:1 and less than or equal to about 38:1.

### Claim 8 (depends on 1)

The quantum dot of claim 1, wherein the semiconductor nanocrystal shell comprises a first shell layer including zinc and selenium, and a second shell layer disposed on the first shell layer and including zinc and sulfur.

### Claim 9 (depends on 8)

The quantum dot of claim 8, wherein the second shell layer does not comprise selenium and the second shell layer is an outermost layer of the quantum dot.

### Claim 10 (depends on 1)

The quantum dot of claim 1, wherein the green light wavelength region is greater than or equal to about 500 nm and less than or equal to about 560 nanometers.

### Claim 11 (depends on 1)

The quantum dot of claim 1, wherein in the quantum dot, a mole ratio of zinc with respect to indium is greater than or equal to about 26:1 and less than or equal to about 45:1.

### Claim 12 (depends on 1)

The quantum dot of claim 1, wherein the first absorption peak is in a wavelength range of greater than about 450 nanometers and less than or equal to about the wavelength of the maximum photoluminescent peak.

### Claim 13 (depends on 12)

The quantum dot of claim 12, wherein the first absorption peak is in a wavelength range of greater than about 455 nanometers.

### Claim 14 (depends on 11)

The quantum dot of claim 11, wherein the valley adjacent to the first absorption peak is present in a range of greater than or equal to about 420 nanometers and less than or equal to about 490 nanometers.

### Claim 15 (depends on 1)

The quantum dot of claim 1, wherein the ratio of the absorption value at 450 nanometers to the absorption value at the first absorption peak is greater than or equal to about 0.75.

### Claim 16 (depends on 1)

The quantum dot of claim 1, wherein the valley depth is greater than or equal to about 0.5.

### Claim 17 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot is present as a plurality of quantum dots having an average size of greater than or equal to about 4 nanometers and less than or equal to about 8 nanometers and a standard deviation of less than or equal to about 30% of the average size.

### Claim 18 (depends on 1)

The quantum dot of claim 1, wherein the maximum photoluminescence peak of the quantum dot exhibits a full width at half maximum of less than or equal to about 50 nanometers.

### Claim 19 (depends on 1)

The quantum dot of claim 1, wherein a quantum efficiency of the quantum dot is greater than or equal to about 84%.

### Claim 20 (depends on 1)

A quantum dot-polymer composite comprising:
a polymer matrix; and
a plurality of quantum dots dispersed in the polymer matrix, wherein the plurality of quantum dots comprises a quantum dot of claim 1.

### Claim 21 (depends on 20)

The quantum dot-polymer composite of claim 20, wherein the quantum dot polymer composite comprises a blue light conversion rate of greater than or equal to about 29% after being thermally-treated at a temperature of about 180° C. for 30 minutes.

### Claim 22 (depends on 20)

The quantum dot-polymer composite of claim 20, wherein the polymer matrix comprises a crosslinked polymer, a linear polymer having a carboxylic acid group, or a combination thereof.

### Claim 23 (depends on 22)

The quantum dot-polymer composite of claim 22, wherein the crosslinked polymer comprises a polymerization product of a monomer having at least two carbon-carbon double bond, a polymerization product of the monomer and a poly thiol compound including at least two thiol groups, or a combination thereof.

### Claim 24 (depends on 20)

The quantum dot-polymer composite of claim 20, further comprising metal oxide fine particles dispersed in the polymer matrix.

### Claim 25 (depends on 20)

A display device, comprising
a light source and a light emitting element,
wherein the light emitting element comprises the quantum dot-polymer composite of claim 20, and the light source provides the light emitting element with incident light.

### Claim 26 (depends on 25)

The display device of claim 25, wherein the incident light has a luminescence peak wavelength of about 440 nanometers to about 460 nanometers.

### Claim 27 (depends on 25)

The display device of claim 25, wherein the light emitting element comprises a sheet including the quantum dot-polymer composite.

### Claim 28 (depends on 25)

The display device of claim 25, wherein the light emitting element comprises a stacked structure comprising a substrate and a light emitting layer disposed on the substrate, wherein the light emitting layer comprises a pattern comprising the quantum dot-polymer composite.

### Claim 29 (depends on 25)

The display device of claim 25, wherein the display device exhibits color reproducibility of greater than or equal to about 80% based on BT2020.