# US 2020/0399535 A1 · Bright silver based quaternary nanostructures

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- Number: US 2020/0399535 A1
- Document ID: US20200399535A1
- Status: Published application
- Kind: A1
- Application number: 16/905,721
- Filed: 2020-06-18
- Published: 2020-12-24
- Earliest claimed: 2019-06-20
- Assignees: Nanosys, Inc.
- Applicants: Nanosys, Inc.
- Inventors: Ashenafi Damtew MAMUYE; Christopher SUNDERLAND; Ilan JEN-LA PLANTE; Chunming WANG; John J. CURLEY
- Web page: https://patentgrep.com/patent/US20200399535A1

## CPC

- C09K 11/025: {non-luminescent particle coatings or suspension media}
- C09K 11/621: {Chalcogenides}
- B32B 17/06: comprising glass as the main or only constituent of a layer, next to another layer of a specific {material}
- B32B 27/18: characterised by the use of special additives
- C08J 5/18: Manufacture of films or sheets
- C08K 9/02: Ingredients treated with inorganic substances
- C09K 11/02: Use of particular materials as binders, particle coatings or suspension media therefor
- G02B 1/002: {made of materials engineered to provide properties not available in nature, e.g. metamaterials}
- G02F 1/133602: {Direct backlight}
- G02F 1/133617: {Illumination with ultraviolet light; Luminescent elements or materials associated to the cell}
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- B29K 2509/02: Ceramics
- B32B 2250/03: 3 layers
- B32B 2250/40: Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
- B32B 2255/10: on synthetic resin layer or on natural or synthetic rubber layer
- B32B 2255/205: Metallic coating
- B32B 2260/025: Particulate layer
- B32B 2260/046: Synthetic resin
- B32B 2264/105: Metal
- B32B 2264/107: Ceramic
- B32B 2307/202: Conductive
- B32B 2307/42: Polarizing, birefringent, filtering
- B32B 2457/202: LCD, i.e. liquid crystal displays
- B32B 2457/206: Organic displays, e.g. OLED
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 40/00: Manufacture or treatment of nanostructures
- C08K 2201/003: Additives being defined by their diameter
- C08K 2201/011: Nanostructured additives
- C09K 2211/18: Metal complexes
- G02B 5/22: Absorbing filters {(G02B5/201 - G02B5/208 take precedence)}
- G02F 1/133614: {using photoluminescence, e.g. phosphors illuminated by UV or blue light}
- G02F 2202/36: Micro- or nanomaterials
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29)
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B29K: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR {MOULDS, } REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

## Claims

### Claim 1

Nanostructures comprising Ag, In, Ga, and S (AIGS) and a shell comprising Ag, Ga and S (AGS), wherein the nanostructures have a peak emission wavelength (PWL) in the range of 480-545 nm and wherein at least about 80% of the emission is band-edge emission, and wherein the nanostructures exhibit a quantum yield (QY) of 80-99.9%.

### Claim 2 (depends on 1)

The nanostructures of claim 1, wherein the nanostructures have an emission spectrum with a FWHM of less than 40 nm.

### Claim 3 (depends on 2)

The nanostructures of claim 2, wherein the nanostructures have an emission spectrum with a FWHM of 36-38 nm.

### Claim 4 (depends on 1)

The nanostructures of claim 1, wherein the nanostructures have a QY of 82-96%.

### Claim 5 (depends on 4)

The nanostructures of claim 4, wherein the nanostructures have a QY of 85-95%.

### Claim 6 (depends on 4)

The nanostructures of claim 4, wherein the nanostructures have a QY of 86-94%.

### Claim 7 (depends on 1)

The nanostructures of claim 1, wherein the nanostructures have an OD450/mass (mL·mg−1·cm−1) greater than or equal to 0.8.

### Claim 8 (depends on 7)

The nanostructures of claim 7, wherein the nanostructures have an OD450/mass (mL·mg−1·cm−1) in the inclusive range 0.8-2.5.

### Claim 9 (depends on 8)

The nanostructures of claim 8, wherein the nanostructures have an OD450/mass (mL·mg−1·cm−1) in the inclusive range 0.87-1.9.

### Claim 10 (depends on 1)

The nanostructures of claim 1, wherein the average diameter of the nanostructures is less than 10 nm by TEM.

### Claim 11 (depends on 10)

The nanostructures of claim 10, wherein the average diameter is about 5 nm.

### Claim 12 (depends on 1)

The nanostructures of claim 1, wherein at least about 80% of the emission is band-edge emission.

### Claim 13 (depends on 1)

The nanostructures of claim 1, wherein at least about 90% of the emission is band-edge emission.

### Claim 14 (depends on 13)

The nanostructures of claim 13, wherein 92-98% of the emission is band-edge emission.

### Claim 15 (depends on 13)

The nanostructures of claim 13, wherein 93-96% of the emission is band-edge emission.

### Claim 16 (depends on 1)

The nanostructures of claim 1, that are quantum dots.

### Claim 17 (depends on 1)

A nanostructure composition comprising:
(a) at least one population of nanostructures of claim 1, and
(b) at least one organic resin.

### Claim 18 (depends on 17)

The nanostructure composition of claim 17, further comprising at least one second population of nanostructures that have a PWL greater than 545 nm.

### Claim 19 (depends on 1, 17)

A method of preparing the nanostructure composition of claim 17, the method comprising:
(a) providing at least one population of nanostructures of claim 1; and
(b) admixing at least one organic resin with the at least one population of (a).

### Claim 20 (depends on 19)

The method of claim 19, wherein 92-98% of the emission is band-edge emission.

### Claim 21 (depends on 19)

The method of claim 19, wherein 93-96% of the emission is band-edge emission.

### Claim 22 (depends on 17)

A device comprising the composition of claim 17.

### Claim 23 (depends on 17)

A film comprising the composition of claim 17, wherein the nanostructures are embedded in a matrix that comprises the film.

### Claim 24 (depends on 17)

A nanostructure molded article comprising:
(a) a first conductive layer;
(b) a second conductive layer; and
(c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises the composition of claim 17.

### Claim 25 (depends on 1)

A method of making the nanostructures of claim 1, comprising
(a) reacting Ga(acetylacetonate)3, InCl3, and a ligand optionally in a solvent at a temperature sufficient to give an In—Ga reagent, and
(b) reacting the In—Ga reagent with Ag2S nanostructures at a temperature sufficient to make AIGS nanostructures,
(c) reacting the AIGS nanostructures with an oxygen-free Ga salt in a solvent containing a ligand at a temperature sufficient to form AIGS/AGS core-shell nanostructures.

### Claim 26 (depends on 25)

The method of claim 25, wherein the ligand is an alkylamine.

### Claim 27 (depends on 26)

The method of claim 26, wherein the alkylamine is oleylamine.

### Claim 28 (depends on 25)

The method of claim 25, wherein in (a) the solvent is present and is octadecene, squalane, dibenzylether or xylene.

### Claim 29 (depends on 25)

The method of claim 25, wherein the temperature sufficient in (a) is 100 to 280° C.; the temperature sufficient in (b) is 150 to 260° C.; and the temperature sufficient in (c) is 170 to 280° C.

### Claim 30 (depends on 25)

The method of claim 25, wherein the temperature sufficient in (a) is about 210° C., the temperature sufficient in (b) is about 210° C., and the temperature sufficient in (c) is about 240° C.