Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device includes a layer structure of a nitride semiconductor, and the layer structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an intermediate layer. The intermediate layer includes an active layer and is provided between the n-type semiconductor layer and the p-type semiconductor layer. The layer structure includes a residual donor in a region at least included in the intermediate layer, the region being situated between the active layer and the p-type semiconductor layer. The intermediate layer includes impurities in the region between the active layer and the p-type semiconductor layer, the impurities compensating the residual donor. Further, the intermediate layer is configured such that a concentration of the impurities in the region between the active layer and the p-type semiconductor layer is higher than a concentration of the impurities in the p-type semiconductor layer.

Dependencies are inferred from the claim text.