Systems and methods for controlling vapor phase processing
AssigneeASM IP Holding B.V.
InventorsJereld Lee Winkler, Cheuk Li, Michael F. Schultz, John Kevin Shugrue
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Abstract
A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.
Claims7
A method of controlling an atomic layer deposition (ALD) device comprising a reaction chamber, an exhaust line that transfers gas out of the reaction chamber, and a valve along the exhaust line, the method comprising:
- for a dose state of the ALD device, determining a first flow conductance setting of the valve corresponding to a first flow conductance based at least in part on a first desired pressure in the reaction chamber and a first gas load for the dose state;
- for a purge state of the ALD device, determining a second flow conductance setting of the valve corresponding to a second flow conductance based at least in part on a second desired pressure in the reaction chamber and a second gas load for the purge state;
- placing the valve at the first flow conductance setting for at least a portion of the dose state;
- pulsing a first reactant vapor into the reaction chamber during the dose state;
- placing the valve at the second flow conductance setting for at least a portion of the purge state;
- and
- purging the reaction chamber by supplying an inactive gas to the reaction chamber during the purge state.
Dependencies are inferred from the claim text.