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US 2020/0370178 A1Published application
Deposition method
AssigneeTokyo Electron Limited
InventorsTakashi CHIBA, Jun SATO
Life of this patent
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Abstract
A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.
Claims8
A deposition method comprising:
- causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate;
- causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate;
- and
- performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.
1 more element
Dependencies are inferred from the claim text.