Loading patent…
AssigneeJX Nippon Mining & Metals Corporation
InventorsRyosuke Sakashita, Hiroshi Takamura, Atsushi Nara, Ryo Suzuki
Estimating the term…
A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.
A potassium sodium niobate sputtering target, comprising a relative density is 95% or higher, a volume resistivity is less than 1000 Ωcm, and a variation of maximum value/minimum value in the volume resistivity is less than 1.5.
4-5. (canceled)
A potassium sodium niobate sputtering target comprising, a relative density is 95% or higher, and a volume resistivity is exceeding 500 kΩcm.
A method of producing a potassium sodium niobate sputtering target, wherein the method includes the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2.
Dependencies are inferred from the claim text.