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US 2020/0365757 A1Published application
Semiconductor device
AssigneeEpistar Corporation
InventorsMeng-Yang CHEN, Yuan-Ting LIN
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Abstract
A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.
Claims20
A semiconductor device, comprising:
- an active structure comprising:
- an active region having a topmost surface and a bottommost surface;
- and
- a first dopant distributing from the topmost surface to the bottommost surface;
- and
- a first semiconductor layer located under the active structure and comprising a second dopant, wherein the active region comprises a semiconductor material including As.
3 more elements
Dependencies are inferred from the claim text.