Bevel peeling and defectivity solution for substrate processing

A method of processing a substrate, comprising:

• positioning a substrate on a substrate support assembly, the substrate support assembly disposed in a processing volume of a processing chamber;
• heating the substrate to a temperature of about 300° C. or more;
• and
• after maintaining the substrate at about 300° C. or more at for at least about 60 seconds, depositing an amorphous carbon layer on a surface of the substrate, comprising:
• flowing one or more deposition material precursors into the processing volume;
• igniting and maintaining a deposition plasma of the one or more deposition material precursors by applying an RF power to a showerhead disposed in the processing volume, wherein the RF power is about 2.12 Watts per cm2 of substrate surface (W/cm2) or more;
• and
• exposing a surface of the substrate to the deposition plasma.

A processing system, comprising:

• a chamber comprising a chamber lid assembly, one or more chamber sidewalls, and a chamber base which collectively define a processing volume;
• a substrate support assembly disposed in the processing volume, the substrate support assembly comprising a substrate supporting portion and an annular portion extending upwardly from the substrate supporting portion, wherein the annular portion is disposed radially outward of the substrate supporting portion, and wherein a radially inward facing surface of the annular portion is sized to be spaced apart from a circumferential edge of a to-be-processed substrate by a distance of about 5 mm or less;
• and
• a computer readable medium having instructions stored thereon for a material deposition method, the material deposition method comprising:
• flowing one or more deposition material precursors into the processing volume;
• igniting and maintaining a deposition plasma of the one or more deposition material precursors by applying an RF power to a showerhead of the chamber lid assembly, wherein the RF power is about 2.12 Watts per cm2 of substrate surface (W/cm2) or more;
• and
• exposing the surface of a substrate positioned on the substrate supporting portion of the substrate assembly to the deposition plasma to deposit an amorphous carbon layer thereon.