Semiconductor device with asymmetrical pinned magnets, and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMingyuan SONG, Chwen YU, Shy-Jay LIN
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Abstract
A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
Claims20
A device, comprising:
- a semiconductor substrate;
- a free magnetic element on the semiconductor substrate;
- a first magnet over the substrate and adjacent to the free magnetic element and having a first polarity and a first value of coercivity;
- and
- a second magnet over the substrate and adjacent to the free magnetic element and having a second polarity, antiparallel relative to the first polarity, and having a second value of coercivity, different from the first value of coercivity, the first magnet and the second magnet being separated from one another.
A device, comprising:
- a semiconductor substrate;
- a free magnetic element over the semiconductor substrate;
- a first magnet on the free magnetic element, the first magnet having a first value of coercivity;
- a second magnet on the free magnetic element, the second magnet having a second value of coercivity different from the first value of coercivity;
- and
- a heavy metal layer between the substrate and the free magnetic element.
A device, comprising:
- a semiconductor substrate;
- a free magnetic element on the semiconductor substrate, the free magnetic element having a domain wall and having a first end and a second end;
- a tunneling barrier layer on the free magnet element;
- a first pinned magnetic layer over the tunneling barrier layer;
- a second pinned magnetic layer over the substrate adjacent the first end of the free magnetic element;
- and
- a third pinned magnetic layer on the semiconductor substrate adjacent the second end of the free magnetic element;
- wherein the second and third pinned magnetic layer have a same material and a same thickness, and have aspect ratios that are different from each other.
Dependencies are inferred from the claim text.