Semiconductor device with asymmetrical pinned magnets, and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMingyuan SONG, Chwen YU, Shy-Jay LIN
Life of this patent
Estimating the term…
Abstract
A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
Claims20
A method comprising:
- forming a free magnetic element on a semiconductor substrate;
- forming a first magnet on the substrate adjacent to a first end of the free magnetic element and having a first polarity and a first value of coercivity;
- and
- forming a second magnet on the substrate adjacent to a second end of the free magnetic element and having a second polarity, antiparallel relative to the first polarity, and having a second value of coercivity, different from the first value of coercivity.
A method, comprising:
- magnetically saturating first and second magnetic elements on a substrate at a first polarity by exposing the first and second magnetic elements to a first magnetic field having a first flux density;
- and
- remagnetizing the first magnetic element at a second magnetic polarity antiparallel to the first polarity without changing the polarity of the second magnetic element by exposing the first and second magnetic elements to a second magnetic field having a second flux density, less than the first flux density.
A method, comprising:
- forming, over a semiconductor substrate, a free magnetic element;
- forming a first magnet over the free magnetic element, the first magnet having a first value of coercivity;
- and
- forming a second magnet over the free magnetic element, the second magnet having a second value of coercivity different from the first value of coercivity.
Dependencies are inferred from the claim text.