Near-infrared photodetector semiconductor device
AssigneeAms AG
InventorsIngrid Jonak-Auer, Gerald Meinhardt, Bernhard Löffler
Life of this patent
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Abstract
The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.
Claims16
A near-infrared photodetector semiconductor device, comprising:
- a semiconductor layer of a first type of conductivity with a main surface,
- a trench or a plurality of trenches in the semiconductor layer at the main surface,
- a SiGe alloy layer in the trench or the plurality of trenches, and
- an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.
A near-infrared photodetector semiconductor device, comprising:
- a semiconductor layer of a first type of conductivity with a main surface, the semiconductor layer being silicon,
- a trench or a plurality of trenches in the semiconductor layer at the main surface,
- a SiGe alloy layer in the trench or the plurality of trenches, the SiGe alloy layer being doped for a second type of conductivity opposite to the first type of conductivity,
- an electrically conductive filling material of the second type of conductivity in the trench or the plurality of trenches, the filling material comprising a portion of the SiGe alloy layer,
- a silicon layer in the trench or the plurality of trenches, the silicon layer being undoped or intrinsically doped,
- the SiGe alloy layer being epitaxially grown on the silicon in the trench or the plurality of trenches and on the main surface,
- the silicon layer being applied on the SiGe alloy layer in the trench or plurality of trenches and above the main surface,
- the SiGe alloy layer and the silicon layer completely filling the trench or the plurality of trenches, and
- a contact connection contacting the SiGe alloy layer.
Dependencies are inferred from the claim text.