Stacked high barrier iii-v power semiconductor diode

A stacked high barrier III-V power semiconductor diode comprising:

• an at least regionally formed first metallic terminal contact layer;
• a heavily doped semiconductor contact region of a first conductivity type with a dopant concentration greater than 1×1018 N/cm3 and with a first lattice constant;
• a doped intermediate layer of a first conductivity type with a dopant concentration of less than 5×1015 N/cm3, with the first lattice constant and with a thickness between 1 micron and 30 microns;
• a drift layer of a second conductivity type with the first lattice constant and with a layer thickness greater than 10 microns;
• a heavily doped metamorphic buffer layer sequence of the second conductivity type with a layer thickness of more than 0.2 microns and less than 20 microns, wherein the metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant, the upper side being arranged in a direction of the drift layer;
• and
• a second metallic terminal contact layer formed below the lower side of the metamorphic buffer layer sequence,
• wherein the first lattice constant is greater than the second lattice constant
• wherein the first metallic terminal contact layer, the semiconductor contact region, the intermediate layer, the drift layer, the metamorphic buffer layer sequence, and the second metallic terminal contact layer are ordered in the order mentioned,
• wherein the second metallic terminal contact layer is integrally bonded with a semiconductor contact layer, and
• wherein at least the heavily doped semiconductor contact region and the drift layer and the metamorphic buffer layer sequence comprise a III-V compound or consist of a III-V compound.