Transistor having reduced contact resistance
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang
Life of this patent
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Abstract
An integrated semiconductor device having a substrate, a bottom source or drain (S/D) structure formed on the substrate. In addition, the device includes a fin extending from the bottom S/D structure and a gate formed around the fin. A top S/D structure is formed on top of the fin. The top S/D structure includes a recessed top S/D surface and a silicide layer covering a top portion of the recess. A contact is communicatively coupled to a surface of the silicide layer of the recessed top S/D surface of the top S/D structure.
Claims20
A semiconductor device comprising:
- a substrate;
- a bottom source or drain (S/D) structure formed on the substrate;
- a fin extending from the bottom S/D structure;
- a gate formed around the fin;
- a top S/D structure formed on top of the fin, the top S/D structure having a recessed top S/D surface and a silicide layer covering a top portion of the recessed top S/D surface;
- and
- a contact communicatively coupled to a surface of the silicide layer of the recessed top S/D surface.
A method of fabricating a semiconductor device, the method comprising:
- forming a substrate;
- forming a bottom source or drain (S/D) structure on the substrate;
- forming a fin extending from the bottom S/D structure;
- forming a gate around the fin;
- forming a top S/D structure on top of the fin,
- forming a recessed top S/D surface and a silicide layer covering a top portion of the recessed top S/D surface in the top S/D structure;
- and
- forming a contact that is communicatively coupled to a surface of the silicide layer of the recessed top S/D surface of the top S/D structure.
A method of fabricating a semiconductor device, the method comprising:
- forming a substrate;
- and
- forming a vertical field effect transistor (VFET) on top of the substrate, the VFET comprising:
- a top source or drain (S/D) structure formed on top of a fin channel, wherein the top S/D structure comprises a V-shape recessed top S/D surface;
- and
- a contact communicatively coupled to a surface of the V-shape recessed top S/D surface of the top S/D structure.
Dependencies are inferred from the claim text.