Electronic device

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory includes:
• first column lines extending in a first direction;
• first row lines extending in a second direction intersecting the first direction;
• first memory cells located between the first row lines and the first column lines;
• second column lines electrically connected to the first column lines, the second column lines extending in the first direction;
• second row lines extending in the second direction;
• and
• second memory cells located between the second row lines and the second column lines,
• wherein the first memory cells and the second memory cells overlap with each other in a third direction intersecting the first and second directions,
• wherein a first second memory cell belongs to a region in which current paths on the second row lines are shorter than current paths on the second row lines in a region which a second second memory cell belongs to, and
• wherein an overlapping ratio of the first second memory cell with a first first memory cell is smaller than an overlap ratio of the second second memory cell with a second first memory cell.

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory includes:
• first column lines extending in a first direction;
• first row lines extending in a second direction intersecting the first direction;
• first memory cells located between the first row lines and the first column lines;
• second column lines electrically connected to the first column lines, the second column lines extending in the first direction;
• second row lines extending in the second direction;
• and
• second memory cells located between the second row lines and the second column lines,
• wherein the first column lines and the second column lines overlap with each other in a third direction intersecting the first direction and the second direction,
• wherein a first region to an nth region are defined based on the length of a current path,
• wherein an overlapping ratio of first and second column lines belonging to the first region in which the current path is short relative to a current path of the nth region is smaller than an overlapping ratio of first and second column lines belonging to the nth region, and
• wherein n is an integer of 2 or more.