Solid-state imaging device, manufacturing method thereof, and electronic device

An imaging device, comprising:

• a semiconductor substrate;
• a first color filter disposed above a light receiving plane of the semiconductor substrate;
• a second color filter disposed above the light receiving plane, and adjacent to the first color filter;
• a first insulating film including silicon nitride disposed between the first and second color filters;
• a second insulating film including silicon oxide disposed between the first and second color filters, and disposed above the first insulating film;
• and
• a third insulating film including silicon disposed between the first and second color filters, and disposed above the second insulating film,
• wherein a color filtered by the first color filter is different from a color filtered by the second color filter.

An electronic apparatus, comprising:

• an imaging device including:
• a semiconductor substrate;
• a first color filter disposed above a light receiving plane of the semiconductor substrate;
• a second color filter disposed above the light receiving plane, and adjacent to the first color filter;
• a first insulating film including silicon nitride disposed between the first and second color filters;
• a second insulating film including silicon oxide disposed between the first and second color filters, and disposed above the first insulating film;
• and
• a third insulating film including silicon disposed between the first and second color filters, and disposed above the second insulating film,
• wherein a color filtered by the first color filter is different from a color filtered by the second color filter;
• and
• a signal processor that processes signals from the imaging device.

An imaging device, comprising:

• a semiconductor substrate;
• a first color filter disposed above a light receiving plane of the semiconductor substrate;
• a second color filter disposed above the light receiving plane, and adjacent to the first color filter;
• a first insulating film disposed between the first and second color filters, and disposed above the light receiving plane;
• a second insulating film including disposed between the first and second color filters, and disposed above the first insulating film;
• and
• a third insulating film disposed between the first and second color filters, and disposed above the second insulating film,
• wherein the first insulating film has a first refractive index,
• wherein the second insulating film has a second refractive index which is smaller than the first refractive index, and
• wherein a color filtered by the first color filter is different from a color filtered by the second color filter.

An electronic apparatus, comprising:

• an imaging device including:
• a semiconductor substrate;
• a first color filter disposed above a light receiving plane of the semiconductor substrate;
• a second color filter disposed above the light receiving plane, and adjacent to the first color filter;
• a first insulating film disposed between the first and second color filters, and disposed above the light receiving plane;
• a second insulating film including disposed between the first and second color filters, and disposed above the first insulating film;
• and
• a third insulating film disposed between the first and second color filters, and disposed above the second insulating film,
• wherein the first insulating film has a first refractive index,
• wherein the second insulating film has a second refractive index which is smaller than the first refractive index,
• wherein a color filtered by the first color filter is different from a color filtered by the second color filter;
• and
• a signal processor that processes signals from the imaging device.