Display device and production method therefor

A manufacturing method of a display device having a substrate including a display area, in which plural pixels are formed, each of the pixels including a TFT having an oxide semiconductor film comprising:

• forming a first insulating film in contact with a first side of the oxide semiconductor film,
• forming a second insulating film in contact with a second side of the oxide semiconductor film,
• forming the first insulating film by a first CVD, in which the substrate is in a first temperature,
• forming the second insulating film by a second CVD, in which the substrate is in a second temperature,
• wherein the second temperature is higher than the first temperature.

A manufacturing method of a display device having a substrate including a first thin film transistor having a polysilicon semiconductor film, and a second thin film transistor having an oxide semiconductor film comprising:

• forming the first thin film transistor at first,
• subsequently, forming a first gate insulating for the second thin film transistor, which is formed at different place from the first thin film transistor in a plan view, by a first CVD, in which the substrate is in a first temperature,
• forming the oxide semiconductor film on the first gate insulating film,
• forming a second gate insulating film on the oxide semiconductor film by a second CVD, in which the substrate is in a second temperature,
• the second temperature is higher than the first temperature.