Bonded semiconductor package and related methods

A method of forming blade interconnects, comprising:

• forming a first undercut pattern in a layer on a first surface of a first wafer, where the first undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;
• electroplating a metal into the first undercut pattern to form a first blade interconnect;
• forming a chamfer in the first blade interconnect during electroplating using the one of two opposing triangles or the hourglass shape of the first undercut pattern;
• forming a second undercut pattern in a layer on a first surface of a second wafer, where the second undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;
• electroplating a metal into the second undercut pattern to form a second blade interconnect;
• forming a chamfer in the second blade interconnect during electroplating using the one of two opposing triangles or the hourglass shape of the second undercut pattern.

A method of forming blade interconnects, comprising:

• forming a first undercut pattern in a layer on a first surface of a first wafer, where the first undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;
• electroplating a metal into the first undercut pattern to form a first blade interconnect;
• forming a second undercut pattern in a layer on a first surface of a second wafer, where the second undercut pattern, when viewed from above the first surface, comprises one of two opposing triangles in the layer or an hourglass shape in the layer;
• and
• electroplating a metal into the second undercut pattern to form a second blade interconnect.