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US 2020/0350243 A1Published application
Soi substrate and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsMark GRISWOLD, Michael J. SEDDON
Life of this patent
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Abstract
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
Claims20
A method of making a plurality of semiconductor die, the method comprising:
- forming a ring around a perimeter of a second side of a silicon substrate through backgrinding the second side of the substrate to a desired substrate thickness;
- and
- etching the second side of the substrate after backgrinding to relieve stress created in the second side of the substrate through the backgrinding.
A method of making a plurality of semiconductor die, the method comprising:
- backgrinding a second side of a silicon substrate to a desired substrate thickness;
- and
- stress relief etching the second side of the substrate after backgrinding.
A method of making a plurality of semiconductor die, the method comprising:
- backgrinding a second side of a silicon substrate to a first substrate thickness;
- and
- wet stress relief etching the second side of the substrate after backgrinding to a second substrate thickness less than 25 microns thick.
Dependencies are inferred from the claim text.