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US 2020/0350205 A1Published application
Method of fabricating a semiconductor device having a liner layer with a configured profile
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJoanna Chaw Yane YIN, Hua Feng Chen
Life of this patent
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Abstract
Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.
Claims20
A method comprising:
- forming an opening in a first layer over a semiconductor substrate, wherein the opening has a first sidewall, a second sidewall, and a bottom;
- performing a first deposition process to form a liner layer including at least one of TiN or TaN on the first sidewall and second sidewall and the bottom;
- forming a masking layer in the opening over the liner layer;
- etching a first portion of the liner layer while using the masking layer to protect a second portion of the liner layer;
- removing the masking layer to expose the second portion of the liner layer wherein the exposing the second portion includes expose a surface of the second portion of the liner layer extending from the first sidewall to the second sidewall;
- performing a second deposition process to deposit material of the liner layer including the exposed surface and on the first sidewall and second sidewall of the opening;
- and
- after performing the second deposition process, filling the opening with a conductive material.
5 more elements
A method comprising:
- forming an opening in a first layer over a semiconductor substrate, wherein the opening has a first sidewall, a second sidewall, and a bottom;
- performing a first deposition process to form a multi-layer liner layer on the first sidewall and second sidewall and the bottom;
- forming a masking layer in the opening over the liner layer;
- etching a first portion of the liner layer while using the masking layer to protect a second portion of the multi-layer liner layer;
- removing the masking layer to expose the second portion of the liner layer wherein the exposing the second portion includes expose a surface of the second portion of the multi-layer liner layer extending from the first sidewall to the second sidewall;
- and
- performing a second deposition process to fill the opening with a conductive material.
4 more elements
A method comprising:
- forming an opening in a first layer over a substrate, wherein the opening has a first sidewall, a second sidewall, and a bottom;
- performing a first deposition process to form a liner layer on the first sidewall and second sidewall and the bottom;
- forming a masking layer in the opening over the liner layer;
- etching a first portion of the liner layer while using the masking layer to protect a second portion of the liner layer;
- removing the masking layer to expose the second portion of the liner layer wherein the exposing the second portion includes exposing a U-shaped liner layer extending along the first sidewall and the bottom to the second sidewall;
- after removing the masking layer, etching the U-shaped liner layer to form an etched liner layer having a constant thickness above the bottom;
- and
- performing a second deposition process to deposit material over the constant thickness liner layer.
5 more elements
Dependencies are inferred from the claim text.