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US 2020/0350199 A1Published application
Method for fabricating shallow trenchisolation
AssigneeUnited Microelectronics Corp.
InventorsHao-Hsuan Chang, Hung-Chun Lee, Shu-Ming Yeh, Ting-An Chien, Bin-Siang Tsai
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI). Preferably, the dry etching process comprises a non-plasma etching process.
Claims9
A method for fabricating semiconductor device, comprising:
- forming a trench in a substrate;
- forming a pad layer adjacent to two sides of trench;
- forming a dielectric layer to fill the trench after forming the pad layer;
- and
- performing a dry etching process to remove the pad layer and part of the dielectric layer at the same time to form a shallow trench isolation (STI), wherein the dry etching process comprises a non-plasma etching process.
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Dependencies are inferred from the claim text.