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US 2020/0350184 A1Published application
Epitaxial iii-n nanoribbon structures for device fabrication
AssigneeIntel Corporation
InventorsSansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Paul Fischer, Kevin Lin
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Abstract
A structure, comprising an island comprising a III-N material. The island extends over a substrate and has a sloped sidewall. A cap comprising a III-N material extends laterally from a top surface and overhangs the sidewall of the island. A device, such as a transistor, light emitting diode, or resonator, may be formed within, or over, the cap.
Claims21
1-25. (canceled)
A microelectronic device, comprising:
- a structure over a substrate, the structure comprising a first III-N material and having a sloped sidewall;
- and
- a cap comprising a second III-N material, wherein the cap extends laterally from a top surface of the structure and overhangs the sidewall of the structure.
A method for making a device, comprising:
- forming one or more openings within a first dielectric material over a substrate;
- growing a structure comprising a first III-N material within individual ones of the openings to extend over a length of the substrate and extend over a portion of the first dielectric material;
- sloping a sidewall of the structure by decomposing the first III-N material;
- and
- growing a cap comprising a second III-N material over a top surface of the structure and laterally from the top surface to overhang the sloped sidewall.
2 more elements
Dependencies are inferred from the claim text.