Ohmic contacts and methods for manufacturing the same
AssigneePrinceton Optronics, Inc.
InventorsGuoyang XU, Jean-Francois Seurin, Chuni Ghosh
Life of this patent
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Abstract
Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.
Claims21
A process for manufacturing an n-type ohmic contact on a n-type semiconductor
- substrate, the process including the steps of:
- depositing a reactant layer onto the n-type semiconductor substrate, the reactant layer including a metal reactant;
- depositing an n-type dopant layer onto the reactant layer, the n-type dopant layer including an n-type dopant;
- depositing a capping layer onto the reactant layer, the capping layer including a metal layer and a diffusion barrier layer;
- and
- heating the n-type semiconductor substrate, reactant layer, n-type dopant layer, and capping layer to a temperature such that the n-type dopant diffuses from the n-type dopant layer into the n-type semiconductor substrate forming an n-type dopant-rich interface layer, and the n-type dopant and the metal reactant inter-diffuse thereby forming a product layer adjacent to the n-type dopant-rich interface layer.
-12. (canceled)
An n-type ohmic contact comprising:
- an n-type semiconductor substrate;
- an n-type dopant-rich interface layer embedded within the n-type semiconductor substrate, the n-type dopant-rich interface layer including an n-type dopant;
- a product layer adjacent to the n-type dopant-rich interface layer, the product layer including a metal reactant and the n-type dopant;
- and
- a capping layer adjacent to the product layer, the capping layer including a metal layer and a diffusion barrier layer.
Dependencies are inferred from the claim text.