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OwnerFerechteh HOSSEINI TEHERANI, Philippe Henri BOVE +2inventors
InventorsFerechteh HOSSEINI TEHERANI, Philippe Henri BOVE, David ROGERS, Vinod Eric SANDANA
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The inventive method provides for a method of p-type doping of Ga2O3 without adding impurity elements. Embodiments allow for significant simplification relative to extrinsic impurity element doping, and thus offers a reduced fabrication cost while being more temperature resistant since the defect dopants require higher temperatures to alter their impact. Certain methods disclosed provide for p-type gallium oxide formation via intrinsic defect doping, without requiring the addition of impurity elements which provide significant simplification relative to the existing state of the art approaches providing more temperature and radiation resistance, while offering a reduced fabrication cost.
A method for the fabrication of wide bandgap p-type Ga2O3 (α, β, ε or κ) by defect doping, involving the growth of gallium oxide on a substrate, using a conventional thin film growth technique, by acting only on the oxygen stoichiometry, and through controlling the growth temperature, the nature/pressure of the oxidant gas or the growth rate, etc. such that p-type gallium oxide is formed via intrinsic defect doping, without requiring the addition of impurity elements.
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