Methods of manufacturing low-temperature polysilicon thin film and transistor
AssigneeHkc Corporation Limited
InventorJianfeng SHAN
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Abstract
A method of manufacturing a low temperature polysilicon thin film, including the steps of: forming a buffer layer on a substrate, a surface of the buffer layer including a plurality of pores; forming a silicon layer on the buffer layer; and annealing the silicon layer to form a polysilicon layer with a partial silicon material of the polysilicon layer being filled into the pores.
Claims20
A method of manufacturing a low temperature polysilicon thin film, comprising the steps of:
- forming a buffer layer on a substrate, a surface of the buffer layer including a plurality of pores;
- forming a silicon layer on the buffer layer;
- and
- annealing the silicon layer to form a polysilicon layer with a partial silicon material of the polysilicon layer being filled into the pores.
A method of manufacturing a low temperature polysilicon thin film, comprising the steps of:
- forming a first sub-buffer layer on a substrate, wherein the first sub-buffer layer is a diffusion barrier layer;
- forming a second sub-buffer layer on the first sub-buffer layer, wherein a meticulous degree of the second sub-buffer layer is lower than a meticulous degree of the first sub-buffer layer;
- roughening the second sub-buffer layer to form a plurality of pores on the surface of the second sub-buffer layer;
- forming a silicon layer on the second sub-buffer layer;
- etching the surface of the silicon layer to roughen the surface of the silicon layer to form an uneven surface as a recrystallization growth space;
- and
- laser annealing the silicon layer to form a polysilicon layer with a partial silicon material of the polysilicon layer being filled into the pores and the recrystallization growth space.
A method of manufacturing a low temperature polysilicon thin film transistor, comprising the steps of:
- forming a buffer layer on a substrate, a surface of the buffer layer including a plurality of pores;
- forming a silicon layer on the buffer layer;
- annealing the silicon layer to form a polysilicon layer with a partial silicon material of the polysilicon layer being filled into the pores;
- forming a gate insulating layer on the polysilicon layer;
- forming a gate on the gate insulating layer;
- and
- forming a source electrode and a drain electrode, wherein the source electrode and the drain electrode are electrically connected to the polysilicon layer.
Dependencies are inferred from the claim text.