Graphene structure and method of forming graphene structure
AssigneeSamsung Electronics Co., Ltd.
InventorsEunkyu Lee, Kyung-Eun Byun, Hyunjae Song, Hyeonjin Shin, Changhyun Kim, Keunwook Shin, Changseok Lee, Alum Jung
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Abstract
Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
Claims25
A graphene structure comprising:
- a substrate;
- graphene on a surface of the substrate;
- and
- a bonding region, where a material of the substrate and carbon of the graphene are covalently bonded, between the surface of the substrate and the graphene.
A method of forming a graphene structure, the method comprising:
- forming a bonding site inducing a covalent bond with carbon on a surface of a substrate, the forming the bonding site including treating the surface of the substrate using a plasma having power equal to or greater than 600 W;
- and
- directly growing a graphene on the surface of the substrate via a plasma enhanced chemical vapor deposition (PECVD) process,
- the directly growing the graphene including forming a bonding region, in which a material of the substrate and carbon of the graphene are covalently bonded, between the surface of the substrate and the graphene.
A method of forming a graphene structure, the method comprising:
- injecting a reaction gas into a process chamber where a substrate is provided, the reaction gas including a carbon source;
- forming a bonding site inducing a covalent bond with carbon on a surface of the substrate, the forming the bonding site including generating a plasma having a power equal to or greater than 600 W, the forming the bonding site being performed in the process chamber;
- and
- directly growing graphene on the surface of the substrate via a plasma enhanced chemical vapor deposition (PECVD) process,
- the directly growing the graphene including forming a bonding region, in which a material of the substrate and carbon of the graphene are covalently bonded, between the surface of the substrate and the graphene.
A method of forming a graphene structure, the method comprising:
- plasma-treating a surface of a substrate using a power greater than or equal to 600 W, the substrate including a material capable of forming a covalent bond with carbon, the plasma-treating the surface of the substrate providing a plasma-treated surface of the substrate;
- and
- directly growing a graphene on the plasma-treated surface of the substrate, a portion of the graphene being covalently bonded to the material of the substrate.
Dependencies are inferred from the claim text.