Treatments to enhance material structures

A method of forming a semiconductor structure, the method comprising:

• delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber, wherein the nitrogen-containing precursor comprises a first nitrogen-containing precursor and the oxygen-containing precursor comprises a first oxygen-containing precursor;
• introducing reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor;
• forming a high-k dielectric material overlying the substrate;
• and
• treating the high-k dielectric material with a second nitrogen-containing precursor or a second oxygen-containing precursor, and wherein the treating incorporates nitrogen into the high-k dielectric material in an amount that is less than or about 10 atomic %.