Substrate treating method, substrate treating apparatus, and substrate treating system

An apparatus for treating a substrate, the apparatus comprising:

• a chamber having an inner space;
• a support unit received in the inner space for supporting and rotating the substrate;
• a first laser irradiation unit for irradiating a first laser beam having a first wavelength to the substrate supported on the support unit;
• a second laser irradiation unit for irradiating a second laser beam having a second wavelength to the substrate supported on the support unit;
• and
• a controller configured to control the first laser irradiation unit, and the second laser irradiation unit,
• wherein the controller is configured to control the first laser irradiation unit and the second laser irradiation unit so that the first wavelength and the second wavelength are different from each other.

An apparatus for treating a substrate, the apparatus comprising:

• a chamber having an inner space;
• a support unit disposed in the inner space for supporting and rotating the substrate;
• a first laser irradiation unit for irradiating a first laser beam onto the substrate supported on the support unit;
• and
• a second laser irradiation unit for irradiating a second laser beam to the substrate supported on the support unit,
• wherein the first laser irradiation unit includes:
• a first laser light source for generating the first laser beam;
• and
• a first wavelength adjusting member for adjusting a range of a wavelength of the first laser beam received from the first laser light source,
• wherein the second laser irradiation unit includes:
• a second laser light source for generating the second laser beam;
• and
• a second wavelength adjusting member for adjusting a range of a wavelength of the second laser beam received from the second laser light source.

A system for treating a substrate, the system comprising:

• a first chamber having a first inner space;
• a second chamber having a second inner space, wherein the second chamber is disposed independently of the first chamber;
• a transfer unit for transferring the substrate between the first chamber and the second chamber;
• a first laser irradiation unit for irradiating a plurality of first unit pulse laser beams to the substrate received in the first inner space;
• a second laser irradiation unit for irradiating a plurality of second unit pulse laser beams to the substrate received in the second inner space;
• and
• a controller configured to control the transfer unit, the first laser irradiation unit, and the second laser irradiation unit,
• wherein the controller is further configured to:
• control the first laser irradiation unit to perform a first treating operation for irradiating the first laser beam to the substrate received in the first inner space;
• control the transfer unit to perform a transfer operation for transferring the substrate subjected to the first treating operation from the first inner space to the second inner space;
• and
• control the second laser irradiation unit to perform a second treating operation for irradiating the second laser beam to the substrate transferred to the second inner space.