Storage device and method of operating the same
AssigneeSK hynix Inc.
InventorHeon Jin CHOO
Life of this patent
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Abstract
Provided herein is a method of operating a memory device configured to perform a program operation on a first memory cell coupled to a selected word line. The method includes determining, after the program operation on the first memory cell has been performed, whether a threshold voltage of a second memory cell coupled to a same bit line to which the first memory cell is coupled and coupled to a word line adjacent to the selected word line corresponds to an erased status. The method also includes applying to the first memory cell, when the threshold voltage of the second memory cell corresponds to the erased status, an additional program voltage higher by a preset voltage than a program voltage last applied during the program operation.
Claims17
A method of operating a memory device configured to perform a program operation on a first memory cell coupled to a selected word line, the method comprising:
- determining, after the program operation on the first memory cell has been performed, whether a threshold voltage of a second memory cell coupled to a same bit line to which the first memory cell is coupled to a word line adjacent to the selected word line corresponds to an erased status;
- and
- applying to the first memory cell, when the threshold voltage of the second memory cell corresponds to the erased status, an additional program voltage higher by a preset voltage than a program voltage last applied during the program operation.
A memory device comprising:
- a memory cell array including a first memory cell coupled to a selected word line;
- a peripheral circuit configured to perform a program operation on the first memory cell;
- and
- control logic configured to control the peripheral circuit, after the program operation has been performed, if a threshold voltage of a second memory cell coupled to a same bit line to which the first memory cell is coupled and coupled to a word line adjacent to the selected word line corresponds to an erased status, to apply an additional program voltage higher by a preset voltage than a program voltage last applied during the program operation to the first memory cell.
A memory controller configured to control a memory device, the memory controller comprising:
- a normal program operation controller included in the memory device and configured to provide a normal program command for performing a normal program operation on a first memory cell coupled to a selected word line, and configured to obtain, when the normal program operation is completed, normal program complete information comprising information about the normal program operation;
- and
- an additional program operation controller configured to determine, based on the normal program complete information, additional program cells that are memory cells on which an additional program operation is to be performed when a threshold voltage of a second memory cell coupled to a same bit line to which the first memory cell is coupled corresponds to an erased status, and provide an additional program command for performing an additional program operation on the additional program cells.
Dependencies are inferred from the claim text.