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US 2020/0348472 A1Published application
Method of forming photonics structures
AssigneeMicron Technology, Inc.
InventorGurtej Sandhu
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Abstract
The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
Claims19
A method for fabricating an integrated structure, the method comprising:
- forming at least one CMOS structure from a first semiconductor material over a substrate, the at least one CMOS structure containing an electronic device;
- forming at least one photonic device from a second semiconductor material disposed above the electronic device, the at least one photonic device having associated microwave-activated dopant implants;
- and
- forming a buried oxide material between the first semiconductor material and the second semiconductor material, the buried oxide material configured to function as a cladding for the at least one photonic device.
1 more element
Dependencies are inferred from the claim text.