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US 2020/0348256 A1Published application
Nanoscale Granularity Field Effect Transistor Array
AssigneeInternational Business Machines Corporation
InventorsSufi Zafar, Steven J. Holmes, Bruce B. Doris
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Abstract
An electrochemical sensor array includes a thermal oxide configured to interface with one or more analytes. There is a transistor device layer that includes a plurality of field effect transistors (FETs) on top of the thermal oxide. A contact and wiring structure layer is on top of the transistor device layer and operative to couple to control nodes of each of the plurality of FETs. The contact and wiring structure are on a side opposite to that of the thermal oxide.
Claims20
An electrochemical sensor array, comprising:
- a thermal oxide configured to interface with one or more analytes;
- a transistor device layer comprising a plurality of field effect transistors (FETs) on top of the thermal oxide;
- and
- a contact and wiring structure layer on top of the transistor device layer and operative to couple to control nodes of each of the plurality of FETs, wherein the contact and wiring structure are on a side opposite to that of the thermal oxide.
1 more element
A method of fabricating an electrochemical sensor, comprising:
- providing a first wafer comprising:
- a substrate
- a buried oxide on top of the substrate;
- a transistor device layer on top of the substrate;
- and
- a thermal oxide;
- and
- providing a second wafer comprising:
- a first layer;
- a second layer on top of the first layer;
- and
- a third layer on top of the second layer;
- bonding the first wafer with the second wafer such that the thermal oxide of the first wafer is closest to the third layer of the second wafer;
- removing the substrate and the buried oxide of the first wafer;
- providing contact and wiring structure on top of the transistor device layer;
- removing the substrate layer of the second wafer;
- and
- removing the third layer of the second wafer.
15 more elements
Dependencies are inferred from the claim text.