Target structure of physical vapor deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Yuan CHEN, Hung-Cheng CHEN, Chih-Hsua HSIEH, Yu-Hsuan WANG
Life of this patent
Estimating the term…
Abstract
A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.
Claims20
A target structure, comprising:
- a body having a first side and an opposing second side, wherein the body includes a hole extending from the first side to the second side, and wherein each of the first side and the second side define a recess;
- a first sputtering target coupled to the first side of the body, the first sputtering target comprising a first material;
- a second sputtering target coupled to the second side of the body, the second sputtering target comprising a second material;
- a retention device comprising a first magnetic plate and a second magnetic plate coupled by a shaft, wherein the shaft is sized and configured to be inserted through the hole in the body, wherein the first magnetic plate is sized and configured to be positioned within the recess defined by the first side of the body and the second magnetic plate is sized and configured to be positioned within the recess defined by the second side of the body, and wherein the first magnetic plate maintains the first sputtering target in a fixed position with respect to the first side of the body and the second magnetic plate maintains the second sputtering target in a fixed position with respect to the second side of the body;
- and
- a rotation mechanism coupled to the body, the rotation mechanism configured to rotate the body.
A physical vapor deposition (PVD) system, comprising:
- a deposition chamber having a target receiving area and a work-piece receiving area;
- and
- a double-sided sputtering target structure positioned within the target receiving area, the double-sided sputtering target structure comprising:
- a body having a first side and an opposing second side, wherein the body includes a hole extending from the first side to the second side, and wherein each of the first side and the second side define a recess;
- a first sputtering target coupled to the first side of the body;
- a second sputtering target coupled to the second side of the body;
- a retention device comprising a first magnetic plate and a second magnetic plate coupled by a shaft, wherein the shaft is sized and configured to be inserted through the hole in the body, wherein the first magnetic plate is sized and configured to be positioned within the recess defined by the first side of the body and the second magnetic plate is sized and configured to be positioned within the recess defined by the second side of the body, and wherein the first magnetic plate maintains the first sputtering target in a fixed position with respect to the recess defined by the first side of the body and the second magnetic plate maintains the second sputtering target in a fixed position with respect to the recess defined by the second side of the body,
- a rotation mechanism configured to rotatably couple to the double-sided sputtering target structure within the deposition chamber, the rotation mechanism configured to rotate the double-sided sputtering target structure.
A method of sputtering, comprising:
- disposing a double-sided sputtering target structure in a deposition chamber, wherein the double-sided sputtering target structure comprises:
- a body extending between a first side and an opposing second side and including a hole extending from the first side to the second side, wherein each of the first side and the second side define a recess,
- a first sputtering target coupled to the first side of the body,
- a second sputtering target coupled to the second side of the body, and
- a retention device comprising a first magnetic plate and a second magnetic plate coupled by a shaft, wherein the shaft is sized and configured to be inserted through the hole in the body, wherein the first magnetic plate is sized and configured to be positioned within the recess defined by the first side of the body and the second magnetic plate is sized and configured to be positioned within the recess defined by the second side of the body, and wherein the first magnetic plate maintains the first sputtering target in a fixed position with respect to the recess defined by the first side of the body and the second magnetic plate maintains the second sputtering target in a fixed position with respect to the recess defined by the second side of the body;
- positioning a work-piece in the deposition chamber, wherein the work-piece is positioned in an opposed facing relationship with the first sputtering target;
- forming a first material layer on the work-piece by sputtering material from the first sputtering target;
- rotating the double-sided sputtering target structure to position the second sputtering target in the opposed facing relationship with the work-piece;
- and
- forming a second material layer on the work-piece by sputtering material from the second sputtering target.
Dependencies are inferred from the claim text.