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OwnerJohn M. WHITE, Yang YANG +3inventors
InventorsJohn M. WHITE, Yang YANG, Kartik RAMASWAMY, Manivannan THOTHADRI, Yue GUO
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Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.
A chamber for electron beam etching, comprising:
A movable electrode assembly for electron beam etching, comprising:
(canceled)
Dependencies are inferred from the claim text.