High Speed Wide Dynamic Range Input Structure
AssigneeNXP USA, Inc.
InventorsWilliam E. Edwards, John M. Pigott
Life of this patent
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AssigneeNXP USA, Inc.
InventorsWilliam E. Edwards, John M. Pigott
Estimating the term…
An input protection circuit (200) and associated method are disclosed for protecting a circuit input (VINP) from positive and negative overvoltages at an input voltage (VIN) with a high-voltage PMOSFET (P1) having a gate, a drain connected across a zener diode (ZD1) to the gate, and a source connected to receive an input voltage; a blocking FET (N1) having a gate connected to a power supply voltage, a drain connected across a zener diode (ZD2) to the power supply voltage, and a source connected to the gate of the high-voltage PMOSFET; a high-voltage NMOSFET (N3) having a gate connected to the power supply voltage, a source providing the protected output voltage and connected across a zener diode (ZD3) to the gate, and a drain connected to a source follower node and a level shifter circuit (214) connected between the drain of the high-voltage PMOSFET and the source follower node.
An input protection circuit for generating an output voltage in response to an input voltage, comprising:
A method for protecting a circuit input from input voltage fluctuations at a voltage input, comprising:
An input protection circuit for generating an output voltage from an input voltage received at a voltage input, comprising:
Dependencies are inferred from the claim text.