Method for the preparation of gallium oxide/copper gallium oxide heterojunction

A method for the preparation of gallium oxide/copper gallium oxide heterojunction, wherein the steps are as follows:

• step 1:
• put the gallium oxide materials in corrosive liquid for 5 min-5 h to obtain ideal surface;
• step 2:
• put gallium oxide materials in quartz boat or quartz tube, the temperature is 700° C.˜1100° C., the pressure is 1×10−4 Pa˜1×105 Pa, the gas atmosphere is a reducing gas or inert gas, the heating time is 1 min to 120 min;
• take out after temperature down to room temperature;
• step 3:
• pre-deposit the copper source on gallium oxide material, or directly cover the copper source layer on the gallium oxide material;
• the thickness of copper layer source is between 10 nm and 10 microns;
• step 4:
• put gallium oxide materials that treated after step 3 in quartz boat or quartz tube, the temperature is 700° C.˜1300° C., the pressure is 1×10−3 Pa˜1×106 Pa, the gas atmosphere is a reducing gas, air, water vapor or nitrogen, the heating time is 1 min to 50 min;
• take out after temperature down to room temperature;
• step 5:
• subsequent processing of copper gallium oxide:
• use a cleaning fluid to get rid of the residue on the surface of copper gallium oxide;
• use the deionized water to produce secondary cleaning for the produced residue;
• dry the sample and properly kept it, that is copper gallium oxide thin films which comprise CuGa2O4 or CuGaO2 alloy as well as copper doping.