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US 2020/0299573 A1Published application
Composite comprising semiconductor nanocrystals and method of preparing the same
OwnerBo Lv, Xiuyan Wang +4inventors
InventorsBo Lv, Xiuyan Wang, Yan Huang, Xiaofan Ren, Jake Joo, Ping Zhu
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Abstract
A method of preparing a semiconductor nanocrystal-silicate composite without significantly reducing the quantum yield of the semiconductor nanocrystal, a composite prepared from the method, and a film and an electronic device comprising the composite.
Claims15
A method of preparing a semiconductor nanocrystal-silicate composite, the method comprising:
- (i) providing a sol gel silicate solution, wherein the sol gel silicate is a reaction product of a first silane having the structure of Si(OR1)4, wherein R1 is selected from a substituted or unsubstituted C1-C8 alkyl, or a substituted or unsubstituted C1-C8 heteroalkyl;
- and a second silane having the structure of R2SiR3n(OR4)3-n, wherein n is an integer selected from 0, 1 and 2;
- R2 and R3 are each independently selected from hydrogen, a substituted or unsubstituted C1-C36 alkyl, a substituted or unsubstituted C1-C36 heteroalkyl, a substituted or unsubstituted alkenyl, a substituted or unsubstituted alkynyl, a substituted or unsubstituted alkoxy, a substituted or unsubstituted aromatic group, an aliphatic cyclic group, a heterocyclic group, or a heteroaromatic group;
- and R4 is selected from a substituted or unsubstituted C1-C8 alkyl, or a substituted or unsubstituted C1-C8 heteroalkyl;
- wherein the sol gel silicate has a number average molecular weight of 500 or more;
- (ii) mixing semiconductor nanocrystals with the sol gel silicate solution to form a mixture;
- (iii) drying or allowing to dry the mixture to provide the composite;
- and
- (iv) optionally milling the composite.
6 more elements
Dependencies are inferred from the claim text.