Nano-electromechanical system (nems) device structure and method for forming the same

A nano-electromechanical system (NEMS) device structure, comprising:

• a first dielectric layer formed over a substrate;
• a first conductive layer formed in the first dielectric layer,;
• a second dielectric layer formed over the first dielectric layer;
• a first supporting electrode, a second supporting electrode and a beam structure formed in the second dielectric layer, wherein the beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure;
• a first through hole formed between the first supporting electrode and the beam structure;
• and
• a second through hole formed between the second supporting electrode and the beam structure.

A nano-electromechanical system (NEMS) device structure, comprising:

• a first dielectric layer formed over a substrate;
• a first conductive layer formed in the first dielectric layer, wherein the first conductive layer comprises a first portion, a second portion, and a third portion between the first portion and the second portion;
• a second dielectric layer formed over the first dielectric layer;
• a first supporting electrode, a second supporting electrode and a beam structure formed in the second dielectric layer, wherein the beam structure is formed between the first supporting electrode and the second supporting electrode, and a sidewall of the beam structure is aligned to a sidewall of the third portion of the first conductive layer;
• a first through hole formed between the first supporting electrode and the beam structure;
• and
• a second through hole formed between the second supporting electrode and the beam structure.