# US 2020/0286731 A1 · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0286731 A1 - Document ID: US20200286731A1 - Status: Published application - Kind: A1 - Application number: 16/810,496 - Filed: 2020-03-05 - Published: 2020-09-10 - Earliest claimed: 2019-03-06 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Naofumi OHASHI; Toshiyuki KIKUCHI - Web page: https://patentgrep.com/patent/US20200286731A1 ## CPC - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P 72/0432: {mainly by conduction} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/54: Apparatus specially adapted for continuous coating - H10P 14/69394: {the material containing titanium, e.g. TiO2} - H10P 72/0454: {surrounding a central transfer chamber} - H10P 72/0602: {Temperature monitoring} - H10P 72/3302: {Mechanical parts of transfer devices} - H10P 72/3304: {characterised by movements or sequence of movements of transfer devices} - H10P 72/3311: {Horizontal transfer of a batch of workpieces} - H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins} - H10P 72/7626: {characterised by the construction of the shaft} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract There is provided a technique that includes: loading an m-th substrate into a process chamber, wherein m is an integer less than n; forming a film on the m-th substrate by heating the m-th substrate in the process chamber; unloading the m-th substrate from the process chamber; waiting for a predetermined time in the process chamber, in a state where the substrates are not present in the process chamber, after the act of unloading; loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting; and forming a film on the next substrate by heating the next substrate in the process chamber. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, which processes n substrates as one lot, comprising: loading an m-th substrate into a process chamber, wherein m is an integer less than n; forming a film on the m-th substrate by heating the m-th substrate in the process chamber; unloading the m-th substrate from the process chamber; waiting for a predetermined time in the process chamber, in a state where the substrates are not present in the process chamber, after the act of unloading; loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting; and forming a film on the next substrate by heating the next substrate in the process chamber. ### Claim 2 (depends on 1) The method of claim 1, wherein in the act of forming the film, the substrate is heated by a heater of a substrate-mounting table, and wherein in the act of waiting, the substrate-mounting table is retracted from the process chamber. ### Claim 3 (depends on 2) The method of claim 2, wherein the predetermined time is a time during which a temperature of the process chamber becomes equal to or lower than a reference temperature. ### Claim 4 (depends on 2) The method of claim 2, wherein the act of waiting is performed after the act of forming the film is repeated for a predetermined number of substrates. ### Claim 5 (depends on 2) The method of claim 2, wherein the act of waiting is performed when a temperature of the process chamber exceeds a reference temperature. ### Claim 6 (depends on 2) The method of claim 2, wherein the process chamber is cooled during the act of waiting. ### Claim 7 (depends on 2) The method of claim 2, wherein the process chamber is installed in a plural number, and wherein whether to proceed to the act of waiting is determined for each of the plural number of process chambers. ### Claim 8 (depends on 1) The method of claim 1, wherein the predetermined time is a time during which a temperature of the process chamber becomes equal to or lower than a reference temperature. ### Claim 9 (depends on 8) The method of claim 8, wherein the act of waiting is performed after the act of forming the film is repeated for a predetermined number of substrates. ### Claim 10 (depends on 8) The method of claim 8, wherein the process chamber is cooled during the act of waiting. ### Claim 11 (depends on 8) The method of claim 8, wherein the process chamber is installed in a plural number, and wherein whether to proceed to the act of waiting is determined for each of the plural number of process chambers. ### Claim 12 (depends on 1) The method of claim 1, wherein the act of waiting is performed after the act of forming the film is repeated for a predetermined number of substrates. ### Claim 13 (depends on 12) The method of claim 12, wherein the process chamber is cooled during the act of waiting. ### Claim 14 (depends on 12) The method of claim 12, wherein the process chamber is installed in a plural number, and wherein whether to proceed to the act of waiting is determined for each of the plural number of process chambers. ### Claim 15 (depends on 1) The method of claim 1, wherein the act of waiting is performed when a temperature of the process chamber exceeds a reference temperature. ### Claim 16 (depends on 15) The method of claim 15, wherein the reference temperature is a temperature at which a grain size of the film formed on the next substrate becomes equal to or larger than a predetermined size. ### Claim 17 (depends on 15) The method of claim 15, wherein the process chamber is cooled during the act of waiting. ### Claim 18 (depends on 1) The method of claim 1, wherein the process chamber is cooled during the act of waiting. ### Claim 19 (depends on 18) The method of claim 18, wherein a heat conductive gas is supplied into the process chamber during the act of waiting. ### Claim 20 (depends on 1) The method of claim 1, wherein the process chamber is installed in a plural number, and wherein whether to proceed to the act of waiting is determined for each of the plural number of process chambers.