# US 2020/0286433 A1 · Display element, display device, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0286433 A1 - Document ID: US20200286433A1 - Status: Published application - Kind: A1 - Application number: 16/647,841 - Filed: 2018-08-29 - Published: 2020-09-10 - Earliest claimed: 2017-09-22 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Kei Kimura - Web page: https://patentgrep.com/patent/US20200286433A1 ## CPC - G09G 3/3258: with pixel circuitry controlling the voltage across the light-emitting element - G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element - G09G 3/3266: Details of drivers for scan electrodes - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/131: Interconnections, e.g. wiring lines or terminals - G09G 2300/043: Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver - G09G 2300/0819: used for counteracting undesired variations, e.g. feedback or autozeroing - G09G 2300/0852: being a dynamic memory with more than one capacitor - G09G 2300/0876: Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes - G09G 2320/045: Compensation of drifts in the characteristics of light emitting or modulating elements - H10D 84/813: {Combinations of field-effect devices and capacitor only} - H10K 59/12: Active-matrix OLED [AMOLED] displays - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A display element includes a light-emitting unit of a current drive type, and a drive unit that drives the light-emitting unit, in which the drive unit includes a capacitance unit, a drive transistor that causes a current corresponding to a voltage held by the capacitance unit to flow through the light-emitting unit, and a write transistor that writes a signal voltage to the capacitance unit, the drive transistor and the write transistor are formed in a state of being separated by an element isolation region, on a semiconductor substrate, and a capacitance generated in a portion where the drive transistor and the write transistor face each other through the element isolation region functions as at least a part of the capacitance unit. ## Claims ### Claim 1 A display element comprising: a light-emitting unit of a current drive type; and a drive unit that drives the light-emitting unit, wherein the drive unit includes a capacitance unit, a drive transistor that causes a current corresponding to a voltage held by the capacitance unit to flow through the light-emitting unit, and a write transistor that writes a signal voltage to the capacitance unit, the drive transistor and the write transistor are formed in a state of being separated by an element isolation region, on a semiconductor substrate, and a capacitance generated in a portion where the drive transistor and the write transistor face each other through the element isolation region functions as at least a part of the capacitance unit. ### Claim 2 (depends on 1) The display element according to claim 1, wherein the drive transistor and the write transistor are provided in a well formed in the semiconductor substrate, the drive transistor includes a first source/drain region to which a feeder line is connected and a second source/drain region connected to one end of the light-emitting unit, the write transistor includes a first source/drain region to which the signal voltage is supplied externally and a second source/drain region connected to a gate electrode of the drive transistor, and the second source/drain region of the write transistor and the first source/drain region of the drive transistor are formed to face each other through the element isolation region. ### Claim 3 (depends on 1) The display element according to claim 1, wherein the element isolation region is formed by a shallow trench isolation (STI) structure in which an insulator is embedded in a groove dug in a surface of the semiconductor substrate. ### Claim 4 (depends on 1) The display element according to claim 1, wherein an impurity diffusion layer that forms a source/drain region of the drive transistor and an impurity diffusion layer that forms a source/drain region of the write transistor are set to have a junction depth of greater than or equal to 1 micrometer. ### Claim 5 (depends on 1) The display element according to claim 1, wherein the drive transistor includes a p-channel field effect transistor. ### Claim 6 (depends on 5) The display element according to claim 5, wherein the write transistor includes a p-channel field effect transistor. ### Claim 7 (depends on 2) The display element according to claim 2, wherein a shield wiring line is provided around a gate wiring line that connects the second source/drain region of the write transistor and the gate electrode of the drive transistor to each other. ### Claim 8 (depends on 7) The display element according to claim 7, wherein the shield wiring line is connected to the feeder line. ### Claim 9 (depends on 2) The display element according to claim 2, wherein the drive unit further includes a switching transistor connected between the feeder line and the first source/drain region of the drive transistor. ### Claim 10 (depends on 2) The display element according to claim 2, wherein the drive unit further includes a switching transistor connected between the one end of the light-emitting unit and the second source/drain region of the drive transistor. ### Claim 11 (depends on 1) The display element according to claim 1, wherein the light-emitting unit includes an organic electroluminescence element. ### Claim 12 A display device comprising display elements arrayed in a two-dimensional matrix, wherein the display elements each include a light-emitting unit of a current drive type, and a drive unit that drives the light-emitting unit, the drive unit includes a capacitance unit, a drive transistor that causes a current corresponding to a voltage held by the capacitance unit to flow through the light-emitting unit, and a write transistor that writes a signal voltage to the capacitance unit, the drive transistor and the write transistor are formed in a state of being separated by an element isolation region, on a semiconductor substrate, and a capacitance generated in a portion where the drive transistor and the write transistor face each other through the element isolation region functions as at least a part of the capacitance unit. ### Claim 13 An electronic device comprising a display device including display elements arrayed in a two-dimensional matrix, wherein the display elements each include a light-emitting unit of a current drive type, and a drive unit that drives the light-emitting unit, the drive unit includes a capacitance unit, a drive transistor that causes a current corresponding to a voltage held by the capacitance unit to flow through the light-emitting unit, and a write transistor that writes a signal voltage to the capacitance unit, the drive transistor and the write transistor are formed in a state of being separated by an element isolation region, on a semiconductor substrate, and a capacitance generated in a portion where the drive transistor and the write transistor face each other through the element isolation region functions as at least a part of the capacitance unit.