EUV Pattern Transfer Using Graded Hardmask
AssigneeInternational Business Machines Corporation
InventorsNelson Felix, Luciana Meli Thompson, Ashim Dutta, Ekmini A. De Silva
Life of this patent
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Abstract
Techniques for EUV resist pattern transfer using a graded hardmask are provided. In one aspect, a method of patterning is provided. The method includes: forming a graded hardmask on a device stack; depositing a resist onto the graded hardmask; patterning the resist to form a pattern in the resist having at least one feature; modifying at least one surface region to increase an etch rate of the graded hardmask; transferring the pattern from the resist to the graded hardmask; and transferring the pattern from the graded hardmask to at least one underlying layer of the device stack. A device structure formed by the patterning method is also provided.
Claims20
A method of patterning, comprising the steps of:
- forming a graded hardmask on a device stack;
- depositing a resist onto the graded hardmask;
- patterning the resist to form a pattern in the resist comprising at least one feature;
- modifying at least one surface region to increase an etch rate of the graded hardmask;
- transferring the pattern from the resist to the graded hardmask;
- and
- transferring the pattern from the graded hardmask to at least one underlying layer of the device stack.
A method of patterning, comprising the steps of:
- forming a graded hardmask on a device stack, wherein the graded hardmask comprises a carbon-containing material, and wherein a carbon content of the graded hardmask gradually decreases along a gradient from a top to a bottom of the graded hardmask;
- depositing a resist onto the graded hardmask;
- patterning the resist to form a pattern in the resist comprising at least one feature;
- removing resist residue from the patterning using an O2-based plasma process that modifies at least one surface region of the graded hardmask exposed within the at least one feature to modify the at least one surface region to increase an etch rate of the graded hardmask;
- transferring the pattern from the resist to the graded hardmask;
- and
- transferring the pattern from the graded hardmask to at least one underlying layer of the device stack.
A device structure, formed by a patterning method comprising the steps of:
- forming a graded hardmask on a device stack, wherein the graded hardmask comprises a carbon-containing material, and wherein a carbon content of the graded hardmask gradually decreases along a gradient from a top to a bottom of the graded hardmask;
- depositing a resist onto the graded hardmask;
- patterning the resist to form a pattern in the resist comprising at least one feature;
- modifying at least one surface region to increase an etch rate of the graded hardmask;
- transferring the pattern from the resist to the graded hardmask;
- and
- transferring the pattern from the graded hardmask to at least one underlying layer of the device stack.
Dependencies are inferred from the claim text.