Compositions and methods for depositing silicon-containing films
AssigneeVersum Materials US, LLC
InventorsMing Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway, Manchao Xiao
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Abstract
Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.
Claims30
A method of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising the steps of:
- a. providing a substrate in a reactor;
- b. introducing into the reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB:
- wherein R1 is selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a cyclic C3 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, and a linear or branched C2 to C10 alkynyl group;
- and R2 is selected from the group consisting of a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, and a cyclic C3 to C10 alkyl group, wherein the at least one silacycloalkane precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
- c. purging the reactor with a purge gas;
- d. introducing a plasma containing source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site, wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2;
- and
- e. optionally purging the reactor with an inert gas;
- and wherein the steps b through e are repeated until a desired thickness of the dielectric film is obtained.
A method of forming a silicon carbide or silicon carbonitride film onto at least a surface of a substrate, the method comprising the steps of:
- a. providing a substrate in a reactor;
- b. introducing into the reactor at least one silacycloalkane precursor selected from the group consisting of 1,3-divinyl-1,3-disilacyclobutane, 1,3-divinyl-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetravinyl-1,3-disilacyclobutane, 1,3,5-trivinyl-1,3,5-trisilacyclohexane, 1,3,5-trivinyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,1,3,3,5,5-hexavinyl-1,3,5-trisilacyclohexane, 1,3-diallyl-1,3-disilacyclobutane, 1,3-diallyl-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetraallyl-1,3-disilacyclobutane, 1,3,5-triallyl-1,3,5-trisilacyclohexane, 1,3,5-triallyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,1,3,3,5,5-hexaallyl-1,3,5-trisilacyclohexane, 1,3-diacetylenyl-1,3-disilacyclobutane, 1,3-diacetylenyl-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetraacetylenyl-1,3-disilacyclobutane, 1,3,5-triacetylenyl-1,3,5-trisilacyclohexane, 1,3,5-triacetylenyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane, 1,1,3,3,5,5-hexaacetylenyl-1,3,5-trisilacyclohexane 1,3-dicyclopropyl-1,3-disilacyclobutane, 1,3-dicyclopropyl-1,3-dimethyl-1,3-disilacyclobutane, 1,1,3,3-tetracyclopropyl-1,3-disilacyclobutane,
- and combinations thereof, wherein the at least one silacycloalkane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
- c. purging the reactor with a purge gas comprising at least one selected from nitrogen, a noble gas, and combinations thereof;
- d. introducing a plasma containing source into the reactor to react with at least a portion of the chemisorbed layer and provide an at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2;
- and
- e. optionally purging the reactor with an inert gas;
- and wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is obtained.
A composition for a vapor deposition of a silicon-containing dielectric film comprising at least one silacycloalkane precursor selected from the group consisting of 1,3-bis(tert-butyl)silacycloalkane, 1,3-bis(tert-butyl)-2-methylsilacycloalkane, 1,3-bis(tert-butyl)-2,4-dimethylsilacycloalkane, 1,3-bis(tert-amyl)silacycloalkane, 1,3-bis(tert-amyl)-2-methylsilacycloalkane, 1,3-bis(tert-amyl)-2,4-dimethylsilacycloalkane, 1,3-bis(tert-butyl)-2-chloroclodisilazane, 1,3-bis(tert-butyl)-2,4-dichlorosilacycloalkane, 1,3-bis(tert-amyl)-2-chloroclodisilazane, 1,3-bis(tert-amyl)-2,4-dichlorosilacycloalkane, 1,3-bis(tert-butyl)-2,4,4-trilchlorosilacycloalkane, 1,3-bis(tert-butyl)-2-dimethylsilacycloalkane, 1,3-bis(tert-butyl)-2-ch loro-2-methylsilacycloalkane, 1,3-bis(tert-amyl)-2-dimethylsilacycloalkane, 1,3-bis(tert-amyl)-2-chloro-2-methyl-silacycloalkane, 1,3-bis(tert-butyl)-2-vinylsilacycloalkane, 1,3-bis(tert-butyl)-2-ethynyl silacycloalkane, 1,3-dicyclopropyl-1,3-disilacyclobutane, 1,3-dicyclopropyl-1,3-dimethyl-1,3-disilacyclobutane, and 1,1,3,3-tetracyclopropyl-1,3-disilacyclobutane, wherein the silacycloalkane precursor is substantially free of one or more impurities selected from the group consisting of a halide, water, metal ions, and combinations thereof.
A vessel which is used to deliver a silacycloalkane precursor for the deposition of a silicon-containing film, the vessel comprising:
- a silacycloalkane precursor selected from the group consisting of 1,3-bis(tert-butyl)silacycloalkane, 1,3-bis(tert-butyl)-2-methylsilacycloalkane, 1,3-bis(tert-butyl)-2,4-dimethylsilacycloalkane, 1,3-bis(tert-amyl)silacycloalkane, 1,3-bis(tert-amyl)-2-methylsilacycloalkane, 1,3-bis(tert-amyl)-2,4-dimethylsilacycloalkane, 1,3-bis(tert-butyl)-2-chloroclodisilazane, 1,3-bis(tert-butyl)-2,4-dichlorosilacycloalkane, 1,3-bis(tert-amyl)-2-chloroclodisilazane, 1,3-bis(tert-amyl)-2,4-dichlorosilacycloalkane, 1,3-bis(tert-butyl)-2,4,4-trilchlorosilacycloalkane, 1,3-bis(tert-butyl)-2-dimethylsilacycloalkane, 1,3-bis(tert-butyl)-2-ch loro-2-methylsilacycloalkane, 1,3-bis(tert-amyl)-2-dimethylsilacycloalkane, 1,3-bis(tert-amyl)-2-chloro-2-methyl-silacycloalkane, 1,3-bis(tert-butyl)-2-vinylsilacycloalkane, 1,3-bis(tert-butyl)-2-ethynyl silacycloalkane, 1,3-bis(tert-butyl)-2-vinylsilacycloalkane, 1,3-bis(tert-butyl)-2-ethynyl silacycloalkane, 1,3-dicyclopropyl-1,3-disilacyclobutane, 1,3-dicyclopropyl-1,3-dimethyl-1,3-disilacyclobutane, and 1,1,3,3-tetracyclopropyl-1,3-disilacyclobutane, wherein the silacycloalkane precursor is substantially free of one or more impurities selected from the group consisting of a halide, water, metal ions, and combinations thereof, wherein the purity of the precursor is about 98% or greater, and wherein the vessel has a headspace comprising at least one inert gas selected from the group consisting of helium, argon, nitrogen and combination thereof.
A method for depositing a dielectric film comprising silicon and carbon via plasma enhanced flowable chemical vapor deposition, the method comprising the steps of:
- placing a substrate comprising a surface feature into a reactor which is at one or more temperatures ranging from −20° C. to about 200° C.;
- introducing into the reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB:
- wherein R1 is selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, cyclic C3 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, and a linear or branched C2 to C10 alkynyl group;
- and R2 is selected from the group consisting of a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, and a cyclic C3 to C10 alkyl group;
- and
- providing a plasma source into the reactor to at least partially react the first and second compounds to form a flowable liquid, wherein the flowable liquid at least partially fills a portion of the surface feature.
Dependencies are inferred from the claim text.