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US 2020/0266609 A1Published application
Germanium-on-silicon laser in cmos technology
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsMathias PROST, Moustafa EL KURDI, Philippe BOUCAUD, Frederic BOEUF
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Abstract
A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
Claims28
A method of forming a germanium waveguide, comprising:
- forming a heavily-doped N-type germanium strip in a silicon substrate;
- forming a P-type doped silicon strip on a first side of the heavily-doped N-type germanium strip;
- forming an N-type doped silicon strip on a second side of the heavily-doped N-type germanium strip opposite said first side;
- etching so that the heavily-doped N-type germanium strip and adjacent portions of the P-type and N-type doped silicon strips are raised with respect to a substrate surface;
- and
- coating the heavily-doped N-type germanium strip and the adjacent portions as well as structure adjacent thereto with a silicon nitride layer.
3 more elements
A germanium waveguide, comprising:
- a silicon substrate,
- a heavily-doped N-type germanium strip on said silicon substrate;
- a P-type doped silicon strip on the silicon substrate adjacent a first side of the heavily-doped N-type germanium strip;
- an N-type doped silicon strip on the silicon substrate adjacent a second side of the heavily-doped N-type germanium strip opposite said first side;
- and
- a silicon nitride layer coating the heavily-doped N-type germanium strip and the silicon strips.
3 more elements
A method of manufacturing a germanium waveguide, comprising:
- forming on a semiconductor substrate coated with a germanium layer;
- forming a heavily-doped N-type germanium strip on the germanium layer;
- depositing a P-type doped silicon/germanium strip on the germanium layer at a first side of the heavily-doped N-type germanium strip;
- depositing an N-type doped silicon/germanium strip on the germanium layer at a second side of the heavily-doped N-type germanium strip opposite the first side;
- and
- depositing a silicon nitride layer over an upper surface of the heavily-doped N-type germanium strip.
3 more elements
A germanium waveguide, comprising:
- a semiconductor substrate;
- a germanium layer coating the semiconductor substrate;
- a heavily-doped N-type germanium strip on the germanium layer;
- a P-type doped silicon/germanium strip on the germanium layer at a first side of the heavily-doped N-type germanium strip;
- an N-type doped silicon/germanium strip on the germanium layer at a second side of the heavily-doped N-type germanium strip opposite the first side;
- and
- a silicon nitride layer over an upper surface of the heavily-doped N-type germanium strip.
4 more elements
Dependencies are inferred from the claim text.