Method for fabricating memory device

A method, comprising:

• depositing a bottom electrode layer over a first dielectric layer;
• depositing a resistance switching element layer over the bottom electrode layer;
• depositing a top electrode layer over the resistance switching element layer;
• etching the top electrode layer, the resistance switching element layer, and the bottom electrode layer to form a memory stack over the first dielectric layer;
• depositing a first spacer layer over the memory stack and the first dielectric layer;
• etching the first spacer layer to form a first spacer extending along a sidewall of the memory stack;
• depositing a second spacer layer over the memory stack, the first spacer, and the first dielectric layer;
• and
• etching the second spacer layer to form a second spacer that has a first portion extending along a sidewall of the first spacer and a second portion extending along a top surface of the first dielectric layer;
• and
• subsequent to etching the second spacer layer to form the second spacer, depositing a second dielectric layer over and in contact with top surfaces of the first and second portions of the second spacer.

A method, comprising:

• depositing a bottom electrode layer over a dielectric layer;
• depositing a resistance switching element layer over the bottom electrode layer;
• depositing a top electrode layer over the resistance switching element layer;
• etching the top electrode layer, the resistance switching element layer, the bottom electrode layer, and the dielectric layer to form a memory stack over the dielectric layer and a recess in the dielectric layer and surrounding the memory stack;
• depositing a first spacer layer over the memory stack and lining the recess of the dielectric layer;
• etching the first spacer layer to form a first spacer extending along a sidewall of the memory stack from a bottom surface of the recess;
• depositing a second spacer layer over the memory stack and the first spacer;
• and
• etching the second spacer layer to form a second spacer extending along a sidewall of the first spacer.