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US 2020/0266335 A1Published application
Magnetoresistive random access memory
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
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Abstract
A semiconductor device preferably includes a metal-oxide semiconductor (MOS) transistor disposed on a substrate, an interlayer dielectric (ILD) layer disposed on the MOS transistor, and a magnetic tunneling junction (MTJ) disposed on the ILD layer. Preferably, a top surface of the MTJ includes a reverse V-shape while the top surface of the MTJ is also electrically connected to a source/drain region of the MOS transistor.
Claims20
A semiconductor device, comprising:
- a metal-oxide semiconductor (MOS) transistor on a substrate;
- an interlayer dielectric (ILD) layer on the MOS transistor;
- and
- a magnetic tunneling junction (MTJ) on the ILD layer, wherein a top surface of the MTJ is electrically connected to a source/drain region of the MOS transistor.
1 more element
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate, wherein atop surface of the MTJ comprises a reverse V-shape;
- a first spacer on a first sidewall of the MTJ;
- and
- a second spacer on a second sidewall of the MTJ, wherein the first spacer and the second spacer are asymmetric.
1 more element
Dependencies are inferred from the claim text.