High efficiency solar cell with lightweight support structure and method of manufacturing the same
AssigneeDY Semiconductor Technology Co., Ltd.
InventorsDefu YI, Ding-Yuan CHEN
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Abstract
A solar cell with lightweight support structure and a method of manufacturing the same are provided. The solar cell includes: a composite substrate; a photoelectric conversion structure disposed on the composite substrate, and including a light receiving side and a back side which is opposite the light receiving side; a front electrode formed on the light receiving side; and a back electrode formed on the back side, where the composite substrate includes an optical reflective layer which is connected with the back side of the photoelectric conversion structure; and where the photoelectric conversion structure includes at least one Group III-V compound semiconductor layer.
Claims20
A solar cell with lightweight support structure, comprising:
- a composite substrate;
- a photoelectric conversion structure disposed on the composite substrate, and comprising a light receiving side and a back side which is opposite the light receiving side;
- a front electrode formed on the light receiving side;
- and
- a back electrode formed on the back side;
- wherein the composite substrate comprises an optical reflective layer which is connected with the back side of the photoelectric conversion structure;
- and
- wherein the photoelectric conversion structure comprises at least one Group III-V compound semiconductor layer.
A method of manufacturing a solar cell with lightweight support structure, comprising:
- forming a photoelectric conversion structure, wherein the photoelectric conversion structure comprises a light receiving side and a back side which is opposite the light receiving side;
- providing a composite substrate;
- and
- disposing the photoelectric conversion structure on the composite substrate;
- wherein the composite substrate comprises an optical reflective layer which is connected with the back side of the photoelectric conversion structure;
- and
- wherein the photoelectric conversion structure comprises at least one Group III-V compound semiconductor layer.
Dependencies are inferred from the claim text.