Detection apparatus, fabrication method thereof, array substrate, and display apparatus
AssigneesHefei Xinsheng Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsRui Peng, Wenbin Jia, Zhijie Ye, Yue Hu, Xiang Wan, Xinxin Wang, Yulin Wang
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Abstract
The present disclosure is related to a detection apparatus. The detection apparatus may include a gate insulating layer. The gate insulating layer may include at least a first layer and a second layer opposite the first layer. A plurality of protruding structures may be provided on a surface of the first layer facing the second layer and/or a surface of the second layer facing the first layer. The first layer and the second layer of the gate insulating layer may be connected through the protruding structures.
Claims18
A detection apparatus, comprising:
- a gate insulating layer comprising at least a first layer and a second layer opposite the first layer,
- wherein a plurality of protruding structures are provided on a surface of the first layer facing the second layer or a surface of the second layer facing the first layer, and the first layer and the second layer of the gate insulating layer are connected through the protruding structures.
A method of fabricating a detection apparatus, comprising:
- forming a gate electrode layer on a substrate;
- forming a first layer of a gate insulating layer on the gate electrode layer;
- forming a second layer of the gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode on another substrate;
- forming a plurality of protruding structures on a surface of the first layer of the gate insulating layer opposite from the gate electrode layer;
- and
- transferring the second-layer of the gate insulating layer, the semiconductor layer, the source electrode, and the drain electrode onto the first layer of the gate insulating layer through a transfer printing process.
Dependencies are inferred from the claim text.