Formation method of semiconductor device with low resistance contact
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Cheng CHEN, Su-Hao LIU, Kuo-Ju CHEN, Liang-Yin CHEN
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming an epitaxial structure over a semiconductor substrate. The method also includes generating and applying plasma on an entire exposed surface of the epitaxial structure to form a modified region in the epitaxial structure. The plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges. The method further includes forming a metal layer on the modified region and heating the metal layer and the modified region to form a metal-semiconductor compound region.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a fin structure over a semiconductor substrate;
- forming a gate stack over the fin structure;
- forming an epitaxial structure over the fin structure, wherein the epitaxial structure is adjacent to the gate stack;
- forming a dielectric layer over the epitaxial structure and the gate stack;
- forming an opening in the dielectric layer to expose the epitaxial structure;
- forming a modified region in the epitaxial structure, wherein the modified region is formed by generating and introducing plasma into the opening, and the plasma includes ions with different charges and is directly introduced into the opening without being filtered out;
- forming a semiconductor-metal compound region on the epitaxial structure, wherein at least a portion of the modified region is transformed into the semiconductor-metal compound region;
- and
- forming a conductive structure over the semiconductor-metal compound region.
A method for forming a semiconductor device structure, comprising:
- forming a fin structure over a semiconductor substrate;
- forming a gate stack over the fin structure;
- forming a source/drain structure over the fin structure, wherein the source/drain structure is adjacent to the gate stack;
- generating and applying plasma on the source/drain structure to form a modified region in the source/drain structure, wherein the plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges;
- forming a metal layer on the exposed surface of the source/drain structure;
- and
- heating the metal layer and the modified region to form a metal-semiconductor compound region.
A method for forming a semiconductor device structure, comprising:
- forming an epitaxial structure over a semiconductor substrate;
- generating and applying plasma on an entire exposed surface of the epitaxial structure to form a modified region in the epitaxial structure, wherein the plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges;
- forming a metal layer on the modified region;
- and
- heating the metal layer and the modified region to form a metal-semiconductor compound region.
Dependencies are inferred from the claim text.