US 2020/0266291 A1 · TRANSISTORS WITH BACKSIDE FIELD PLATE STRUCTURES

Abstract

Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization layer (i.e., at the “backside” of an IC structure). In some embodiments, such a field plate may be implemented as a through-silicon via (TSV) extending from the back/bottom face of the substrate towards the III-N semiconductor material. Implementing field plates at the backside may provide a viable approach to changing the distribution of electric field at a transistor drain and increasing the breakdown voltage of an III-N transistor without incurring the large parasitic capacitances associated with the use of metal field plates provided above the polarization material. In addition, backside field plates may serve as a back barrier for advantageously reducing drain-induced barrier lowering.

Claims20

Dependent claims

An integrated circuit (IC) structure, comprising:

a support structure (e.g., a substrate, a die, or a chip);
an III-N transistor, comprising:
a channel stack over the support structure, the channel stack comprising an III-N semiconductor material, and a polarization material over the III-N semiconductor material,
a first and a second source/drain (S/D) regions in the channel stack, and
a gate stack over a portion of the channel stack between the first and the second S/D regions;
and
a field plate structure, configured to be coupled to a bias source, and comprising an electrically conductive structure having a first portion in the support structure and a second portion in a portion of the III-N semiconductor material between the first S/D region and the second S/D region.

4 more elements

Dependencies are inferred from the claim text.

Transistors with backside field plate structures

Life of this patent

Transistors with backside field plate structures

Life of this patent

Abstract

Claims20