Monolithic self-aligned heterojunction bipolar transistor (hbt) and complementary metal-oxide-semiconductor (cmos)
AssigneeQUALCOMM Incorporated
InventorRanadeep DUTTA
Life of this patent
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Abstract
Certain aspects of the present disclosure generally relate to an integrated circuit (IC) having a heterojunction bipolar transistor (HBT) device. The HBT device generally includes an emitter region and a collector region. The collector region may include a proton implant region having an edge aligned with an edge of the emitter region. In certain aspects, the HBT device also includes a base region disposed between the emitter region and the collector region.
Claims20
An integrated circuit (IC) comprising a heterojunction bipolar transistor (HBT) device, the HBT device comprising:
- an emitter region;
- a collector region, wherein the collector region comprises a proton implant region having an edge aligned with an edge of the emitter region;
- and
- a base region disposed between the emitter region and the collector region.
An integrated circuit (IC) comprising a heterojunction bipolar transistor (HBT) device, the HBT device comprising:
- an emitter region;
- a spacer, wherein the emitter region is surrounded, at least in part, by the spacer;
- a collector region, wherein the collector region comprises a proton implant region having an edge aligned with an edge of the spacer;
- and
- a base region disposed between the emitter region and the collector region.
A method for fabricating an integrated circuit (IC), comprising:
- forming a collector region;
- forming a base region above the collector region;
- forming an emitter region above the base region;
- forming a mask region above the emitter region;
- etching the mask region such that only a portion of the mask region is above the emitter region;
- and
- performing proton implantation to form a proton implant region of the collector region after the etching of the mask region.
Dependencies are inferred from the claim text.