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US 2020/0266276 A1Published application
Pnictide Nanocomposite Structure for Lattice Stabilization
AssigneeIQE plc
InventorsAndrew Clark, Rodney Pelzel, Mukul Debnath, Rytis Dargis, Robert Yanka
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Abstract
A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.
Claims19
A layered structure comprising:
- a substrate;
- a distortion layer having a first lattice constant and being epitaxially grown over the substrate, wherein the distortion layer comprises a plurality of nanocomposites that modify the first lattice constant of the distortion layer;
- and
- a stabilization layer having a second lattice constant and being epitaxially grown over the distortion layer, wherein a second lattice constant of the stabilization layer is lattice matched to the first lattice constant modified by the plurality of nanocomposites of the distortion layer.
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A layered structure comprising:
- a substrate;
- a first semiconductor layer epitaxially grown over the substrate;
- a dislocation filter epitaxially grown over the first semiconductor layer;
- and
- a second semiconductor layer epitaxially grown over the dislocation filter.
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Dependencies are inferred from the claim text.