In-Situ Straining Epitaxial Process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiu-Ting Chen, Yi-Ming Huang, Shih-Chieh Chang, Hsing-Chi Chen, Pei-Ren Jeng
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Abstract
A semiconductor device includes an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel. The straining region comprises a defect comprising two crossing dislocations such that a cross-point of the dislocations is closer to a bottom of the straining region than to a top of the straining region. The straining region comprises an element with a smaller lattice constant than a material forming the substrate.
Claims20
A semiconductor device comprising:
- an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel;
- wherein the straining region comprises a defect comprising two crossing dislocations such that a cross-point of the dislocations is closer to a bottom of the straining region than to a top of the straining region;
- wherein the straining region comprises an element with a smaller lattice constant than a material forming the substrate.
A semiconductor device comprising:
- a semiconductor substrate with a gate stack;
- a source/drain region adjacent to the gate stack;
- a first defect within the source/drain region;
- a second defect within the source/drain region positioned such that both the first defect and the second defect form a symmetrical x-shape that extends to a top surface of the source/drain region;
- and
- a semiconductor layer directly on a top surface of the straining region.
A semiconductor device comprising:
- a source/drain region within a semiconductor substrate, the source/drain region being adjacent to a gate stack, the gate stack positioned above a channel within the semiconductor substrate;
- a defect within the source/drain region, the defect comprising at least two dislocations that form an x-shape extending to a top surface of the source/drain region, the x-shape having a cross-point within the source/drain region, wherein a cross-point of the x-shape at a specific location within the source/drain region such that there is an equal distance between the cross-point and sidewalls of the source/drain region on both sides of the cross-point;
- and
- a semiconductor layer directly on the top surface of the source/drain region.
Dependencies are inferred from the claim text.